CAMBRIDGE, Mass. - The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication systems and the power electronics needed for state-of-the-art data centers, Adam Zewe writes for MIT News. Continue reading original article.
The Military & Aerospace Electronics take:
23 June 2025 -MIT researchers and collaborators have developed a cost-effective, scalable method for integrating high-performance gallium nitride (GaN) transistors onto standard silicon CMOS chips. GaN is a promising semiconductor for high-speed communications and power electronics, but its high cost and complex integration have limited commercial use. The team’s process involves fabricating tiny GaN transistors, called dielets, which are individually cut and bonded to a silicon chip using low-temperature copper-to-copper bonding. This method minimizes material use and avoids the need for expensive gold bonding or specialized facilities.
The hybrid chips combine the speed and power of GaN with the digital processing capabilities of silicon, leading to devices that are more efficient and generate less heat. The researchers demonstrated the approach by building a power amplifier with better signal strength and efficiency than traditional silicon-based designs.
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Jamie Whitney, Senior Editor
Military + Aerospace Electronics
